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E-Beam Evaporation, Magnetron Sputtering, Electron
Cyclotron Resonance Plasma,
Effusion Cell Evaporation,
Ion Assisted Deposition, Chemical Vapor Deposition,
Sol-Gel Synthesis, Atomic Layer Deposition
LASST is equipped for the synthesis of thin film materials
using a wide variety of techniques. Metals, semiconductors,
and oxides are grown by Chemical Vapor Deposition (CVD),
Atomic Layer Deposition (ALD), Sol-Gel Synthesis, and
Physical Vapor Deposition (PVD) techniques. In addition
to several individual deposition systems, the Thin
Film Synthesis, Processing and Characterization Facility
provides a unique combination of film deposition and
characterization tools in one integrated cluster tool
ultra-high vacuum system.
Thin Film Synthesis & Characterization
Facility
This facility has been established to fabricate,
characterize, and develop novel semiconducting and
ceramic-based thin film materials. The instrumentation
allows for precise control of film structures
and compositions, including molecular beam epitaxy,
ion-assisted deposition, and plasma techniques.
In
this facility, five ultra-high vacuum chambers are
interconnected by a sample trolley transportation system.
The heart of the facility is a 24" diameter
ultra-high vacuum deposition chamber equipped with
many well-controlled deposition sources that can be
simultaneously focused onto a 2" substrate area.
These sources include an ECR microwave plasma source,
4-pocket electron beam evaporator, single-pocket electron
beam evaporator, Kaufman ion source, two magnetron
sputtering sources with off-axis tilt, and two effusion
cells. Film structure and interface characterization
is carried out in-situ during growth using reflection
high energy electron diffraction (RHEED).
Schematic
View of the Molecular Epitaxy Deposition Chamber
The four thin film analysis chambers
provide capabilities for x-ray and ultra-violet photoelectron
spectroscopy using a hemispherical analyzer (XPS and
UPS), scanning Auger spectroscopy using a cylindrical
mirror analyzer (AES), AES depth profiling with azimuthal
sample rotation, low energy electron diffraction (LEED),
low energy ion scattering (LEIS), variable temperature
scanning tunneling microscopy (STM) and atomic force
microscopy (AFM), and conductivity/Hall Effect measurements.
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