David E. Kotecki

Research interests

Dr. Kotecki joined the Electrical and Computer Engineering Department at the University of Maine in 1999. His research focus is in the areas of microelectronics, VLSI design, electronic materials, and computer modeling and simulation. Prior to joining the faculty at UMaine, he was a senior engineer at the IBM Microelectronics Division, Semiconductor Research and Development Center in Hopewell Junction, NY. He received a Ph.D. in Engineering Applied Science from the University of California, Davis in 1988 and performed research on laser assisted chemical vapor deposition at the Lawrence Livermore National Laboratory in California. He has received 60 U.S. Patents for inventions related to semiconductor processing, microelectronic structures and devices and has authored or co-authored more than 45 papers in these areas. He is a senior member of IEEE and a member of APS, MRS and Tau Beta Pi.

Publications

• for submission: IEEE, Transactions of Electron Devices (2003).
• Prepared for submission: J. Vac. Sci. & Technology A (2003).
• (2003).
• Capacitors Having Polycrystalline Dielectrics," Elec. Dev. Letters, 23, 267 (2002).
• Thick Films from 10Hz to 1.8 GHz," J. Appl. Phy., 91, 6775 (2002).
• Soc., 688, 247 (2002).
• (2001).
• Rapid Comm. Lett., 15, 194 (2000).
• Proc. Mat. Res. Soc., 541, 23 (1999).
• Memory Applications," J. Europ. Ceram. Soc., 19, 1457 (1999).
• IBM J. Res. Dev., 43, 367 (1999).
• Lett., 73, 1832 (1998).
• Curriculum Vitae of David E. Kotecki, 8 January 2004 1
• Ceramic Interfaces, MIT, 57 (1998).
• (1998).
• Implanted (Ba,Sr)TiO3 Thin Films," Proc. Mat. Res. Soc., 493, 27 (1998).
• (Ba,Sr)TiO3 Films for Gigabit DRAM ," Proc. Mat. Res. Soc., 493, 33 (1998).
• Contributing Substrates," J. Appl. Phys., 83, 802 (1998).
• from mHz to 20 GHz," Appl. Phys. Lett., 72, 498 (1998).
• Appl. Phys. 1, 36, 4762 (1997).
• Ferroelectr., 16, 1 (1997).
• Producing Patterned Platinum Structures," Integr. Ferroelectr., 16, 109 (1997).
• 109, (1996).
• Chemical Vapor Deposited Metallurgy," J. Electr. Packag., 118, 7 (1996).
• with Silicon Dioxide," J. Appl. Phys., 79, 1123 (1996).
• Decay," Proc. Mater. Res. Soc., 361, 257 (1995).
• Resonance Oxide Deposition," Rev. Sci. Instr., 66, 1108 (1995).
• Curriculum Vitae of David E. Kotecki, 8 January 2004 2
• Deposited by Remote ECR Chemical Vapor Deposition," J. Appl. Phys., 77, 1284 (1995).
• Formation Measured during Rapid Thermal Annealing," J. Appl. Phys., 77, 614 (1995).
• Doping," J. Electrochem. Soc., 141, 1378 (1994).
• Vac. Sci. Technol. B., 12, 2752 (1994).
• Sadana, "Arsenic Gas-Phase Doping of Polysilicon," J. Vac. Sci. Technol. B., 12, 1390 (1994).
• Defects in Ultra-Thin Rapid-Thermal Oxide on Silicon," Appl. Phys. Lett., 62, 2682 (1993).
• Silicon Nitride," J. Mater. Res., 8, 2354 (1993).
• WF6," Proc. Mater. Res. Soc., 282, 371 (1993).
• ECR-Enhanced CVD," Proc. Electrochem. Soc., 92-18, 545 (1992).
• Microcrystalline Silicon," Proc. Mater. Res. Soc., 242, 693 (1992).
• Symmetric Chemical-Vapor-Deposition Reactor," J. Vac. Sci. Technol. A., 10, 3136 (1992).
• 10, 843 (1992).
• Prepared by Plasma-enhanced Chemical Vapor Deposition," Appl. Phys. Lett., 58, 1632 (1991).
• (1991).
• Annealing on Material Properties," Proc. Mater. Res. Soc., 164, 353 (1990).
• Mater. Res. Soc., 149, 173 (1990).
• Nucleation in Localized Laser Chemical Vapor Deposition," J. Appl. Phys., 64, 4920 (1988).
• California, Davis, CA, June 1988. (Also published as UCRL 53896, Lawrence Livermore
• National Laboratory, June, 1988.)
• Silicon by Localized Laser CVD," Proc. Mater. Res. Soc., 101, 119 (1988).
• Direct-Laser Writing," Proc. Mater. Res. Soc., 75, 65 (1987).
• of Deposition," J. Vac. Sci. Technol. A., 4, 659 (1986).
• Systems," Proc. Soc. Photo-Optical Inst. Eng., 491, 243 (1984).
• Intensifer Tubes," Proc. Soc. Photo-Optical Inst. Eng., 427, 62 (1983).
• IEEE Trans. of Nucl. Sco., 30, 4624 (1983).

[Edit my profile]